Zero-Power Sensors

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Overview: A semiconducting device includes a substrate, a piezoelectric wire, a structure, a first electrode and a second electrode. The piezoelectric wire has a first end and an opposite second end and is disposed on the substrate. The structure causes the piezoelectric wire to bend in a predetermined manner between the first end and the second end so that the piezoelectric wire enters a first semiconducting state. The first electrode is coupled to the first end and the second electrode is coupled to the second end so that when the piezoelectric wire is in the first semiconducting state, an electrical characteristic will be exhibited between the first electrode and the second electrode. The disadvantages of the prior art are overcome by the present invention which, in one aspect, is a semiconducting device that includes a substrate, a piezoelectric wire, a structure, a first electrode and a second electrode. The piezoelectric wire has a first end and an opposite second end and is disposed on the substrate. The structure causes the piezoelectric wire to bend in a predetermined manner between the first end and the second end so that the piezoelectric wire enters a first semiconducting state. The first electrode is coupled to the first end and the second electrode is coupled to the second end so that when the piezoelectric wire is in the first semiconducting state, an electrical characteristic will be exhibited between the first electrode and the second electrode. In another aspect, the invention is a biogenerator that includes an array of piezoelectric nanowires, an electrode and a fluid-tight sealant. The array of piezoelectric nanowires extends upwardly form a substrate. The electrode has a corrugated surface disposed parallel to the substrate so that the corrugated surface faces the piezoelectric nanowires. The fluid-tight sealant is disposed about a portion of the substrate, the array and the electrode so as to prevent fluids from entering the array. In another aspect, the invention is a device for detecting both point location and point pressure of an object placed against the device that includes a substrate. A plurality of nanowires extends upwardly from the substrate. A plurality of pixilated conductive electrodes is disposed in a layer that is spaced apart from the zinc oxide nanowires. A spacer is disposed between the substrate and the plurality of pixilated conductive electrodes. In another aspect, the invention is a method of making a semiconducting device in which a piezoelectric wire is placed on a substrate. A force is applied to the piezoelectric wire, which has a first node and a spaced apart second node. The force causes the piezoelectric wire to bend between the first node and the second node to an angle that causes the wire to enter a predetermined first semiconducting state. In yet another aspect, the invention is a method of making a force sensor in which a plurality of aligned piezoelectric nanowires is grown to a predetermined height on a single crystal substrate. A polymer layer is spin coated onto the substrate so that the polymer layer surrounds the piezoelectric nanowires but has a thickness less than the predetermined height of the piezoelectric nanowires. A layer of a conductive material is deposited on the polymer layer so as to be in contact with the piezoelectric nanowires. The polymer layer is dissolved and removed, thereby leaving a semiconductor piezoelectric member having an outer edge. The outer edge is sealed with an insulating material. The layer of conductive material and the substrate are coupled to an electrical sensor.