Register for free to
view the full innovation profile.
High Hermeticity packages demonstrated (near hermetic) Wafer level process - high volume possible Provides 3D interconnect in a single package design
About
About Supported by the Scottish Enterprise Proof of Concept Programme, a team at Heriot-Watt University (Edinburgh, Scotland) developed a wafer level process for bonding or encapsulating MEMS, MOEMS, RF-MEMS or other micro-electronic devices. Using a commercial polymer and advanced electroplating we demonstrated a composite structure offering greater barrier properties (near hermetic) than polymer only with the added benefit of 3D interconnectivity to reduce device footprint. The finished packages can be bonded at low temperatures suited to polymeric materials (e.g. BCB from DOW Chemical) or they can be sealed individually using laser based processing. Data is available on process conditions and Helium leak/ hermeticity testing regimes carried out internally. Key Benefits High Hermeticity packages demonstrated (near hermetic) Wafer level process - high volume possible Provides 3D interconnect in a single package design Low temperature polymer bonding Applications MEMS & Optoelectronics packaging at wafer or chip level 3D bonding or interconnection of dissimilar surfaces (Glass/Silicon/metal) IP Status UK patent (GB) granted for High Barrier Package Designs. Supported by a background European patent (valid in GB, FR, DE) for Laser Assisted Bonding Process for MEMS. White papers available. License is available in all fields of use in combination with know-how in package design processes. Concept has been proven and requires process development/ scale up in a realistic packaging environment.