Thin-Film Transistors

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Summary: Certain thin-film dielectric materials have been investigated for use in OTFTs; in attempts to combine the high dielectric constants, the ability to form very thin films, low leakage current, high dielectric strength, processibility, and low cost of fabrication, there remains a need for printable gate insulators with high dielectric constant for incorporation into OTFTs having other desirable electrical properties. The various inventions disclosed and described herein relate to printable organic thin- film transistors (OTFT) with a gate insulator layer comprised of nanocomposites incorporating metal oxide nanoparticles coated by organic ligands. In some aspects, disclosed herein are descriptions of the geometry of such transistors, the conducting, dielectric and semiconducting materials used to fabricate such transistors, and methods used to fabricate such transistors.