Thermal Expansion

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Invention Summary: During manufacturing of thin films and semiconductors, it is critical to monitor the radius of curvature and thermal expansion of samples to identify and manage stresses. These parameters are currently measured optically based on the deflection of multiple parallel beams. However, this approach is limited in the size of samples that can be measured, the resolution of the measurements, and the distance between the sample and the measurement apparatus. Researchers at Rutgers have developed a novel measurement apparatus to overcome these limitations. Specifically, a wide beam is directed at the sample, and the deflected beam passes through a mask. The radius of curvature is determined from the resulting interference pattern. This approach enables high-resolution measurements of small samples. Furthermore, the measurement apparatus can be separated from the sample, making it possible to perform measurements at high temperatures and therefore monitor stress and thermal expansion in situ. As components become smaller, it is essential to use a sensitive apparatus with the power to identify stress induced failures in these reduced size  components.   Market Application: Quality control: •  Semiconductor manufacturing •  Thin film fabrication •  Lens manufacturing •  Packaged structures Advantages: •  High resolution (4x10-6 δ) •  Small sample size (5x5 mm) •  Measurement at high temperature (1500 °C) •  In-situ thermal expansion measurement Intellectual Property & Development Status: Patent pending. Available for licensing and/or research collaboration