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New technique to deposit high crystalline quality Gallium Antimonide (GaSb) epilayers on low-cost Silicon substrates.
About
A new technique has been developed by research carried out at Lancaster University to deposit high crystalline quality Gallium Antimonide (GaSb) epilayers on low-cost Silicon substrates. Silicon photonics has emerged as the most promising technology for next-generation compact photonic systems. This new technique has overcome the fundamental issues associated with growing compound semiconductors directly on silicon. This will drastically reduce the manufacturing costs associated with traditional epitaxy on GaSb wafers. It also opens up the possibility for new applications in integrated mid-infrared photonic circuits.
Key Benefits
Low Defect density GaSb-on-Si epilayers Reduced manufacturing costs New applications in photonic integrated circuits High electron and hole mobility materials
Applications
Industrial and Environmental Sensing Free space Optical communications Medical Diagnostics Defence Thermal imaging Infrared countermeasures for homeland security