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A new FET design has resulted in a power device with low leakage capable of high frequency operation (>100 Khz).
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Description: Vertical GaN field effect transistor devices are critical to the billion dollar power electronics market. Wide bandgap semiconductors offer the promise of miniaturized power supplies with higher efficiencies, however this development has been held back due to current designs which utilize large size crystalline substrates and inefficient doping processes. A new FET design has resulted in a power device with low leakage capable of high frequency operation (>100 Khz). Additionally, fabrication of these devices has been made extremely simple by avoiding multiple epitaxial regrowth steps.