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This invention aims to compete with e-beam lithography to make large area patterned arrays with feature size <20 nm in a fast, reliable and inexpensive way.
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Track Code 2012-134 Short Description This invention aims to compete with (could be superior to) e-beam lithography to make large area patterned arrays with feature size <20 nm in a fast, reliable and inexpensive way. Two types of patterned arrays can be fabricated by this method: dot (pillar) and antidot (pit) arrays. The transferred nanopattern and feature size are mainly determined by the self-assembled monolayers of nanoparticles, which have been routinely fabricating in large area by a novel discovered discovered by this group. Many types of nanoparticles can be self-assembled into hexagonal arrays and used for pattern transfer.