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This method alleviates this challenge by enabling epitaxial halide-based precursor chemistries for growth of films within standard processes.
About
This method alleviates this challenge by enabling epitaxial halide-based precursor chemistries for growth of films within standard processes (MBE, chemical vapor deposition (CVD), atomic layer epitaxy etc). Metal-halide-based precursors, and particularly chloride-, bromide- and iodide-based precursors, are advantageous in that they do not generate the hydrogen and carbon contamination associated with metal-organic precursors. Additionally, metal-halide precursors often provide higher purity compositions and afford enormous flexibility in film component choices because almost all refractory metals are available as a solid halide composition.
Key Benefits
Single crystal, epitaxial film growth of improved property p-type and n-type semiconductors. Metal halide precursors alleviate limitations of metal organic precursors and enable huge range of film component choices. Film growth rates suitable for device production.
Applications
Memresistors capable of holding any number of values, not just ‘0’ or ‘1’ o Use with analog or digital memory devices Tapered structures allow tailored, wide-range of resistance values. Programmable memtransistors e.g. memresistor programmable memory or gain circuit, reconfigurable transistor capable of producing combinations of pMOS or nMOS states, even the conversion of n-type regions to p-type (or vice versa)