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Provides control over available shutter speeds with the theoretical limit in GHz frequencies regime, operable over selected relatively narrow frequency bands.
About
What is the problem? The vast majority of thermal imaging devices use a mechanical shutter in front of sensitive elements. The shutter periodically blocks incoming signals to correct the response of the elements with respect to the background. Despite an apparent simplicity of the mechanical shutter, its construction is based on moving parts, which restricts applications of thermal imaging for high-speed measurements and in environments with high g-forces. The mechanical shutter is relatively bulky as it requires a space to accommodate the blade, energy inefficient and inherently limited to slow speed of the modulation. Our new Solution? Electro-optical modulation is an attractive alternative as it simplifies operation, provides significantly higher modulation speed, shrinks dimensions, resistant to mechanical shocks and is silent. Benefits of the new technology Smaller, faster and quieter than current mechanical shutters, provides control over available shutter speeds with the theoretical limit in GHz frequencies regime, operable over selected relatively narrow frequency bands, allows stroboscopic and 3D measurements, provides capability for high-frequency sampling rate needed to improve image quality and the signal- to-noise ratio, exhibits robust manufacturing technology, extends capabilities of IR and thermal imaging to new markets and applications, such as gaming and position tracking. Background Solid-state modulators/shutters based on the electro-refractive effect have been proposed and researched to replace the mechanical counterpart. In the heart of our modulator is a technology based on the fusion of micro- and nano-patterned surfaces with the electro-refractive effect. This technology allows to produce a semiconductor optical structure fully transparent for the middle and far infra red radiation in a passive state. Pumping optically the free charge carriers into the structure activates the modulator. At a specific charge density the structure will almost completely block the incoming radiation. Periodically driven excitation of the structure modulates a passing through signal synchronised with the external driver. The speed of the modulation can reach GHz regime with the modulation contrast above 90%. Moreover the modulation occurs over a narrow band around a specific resonance infra-red frequency given by the properties of the structure.