Fabricating Method of Nanotube

About

Method for Fabricating Optical Semiconductor Nanotubes and Devices Overview: Semiconductor micro- and nanotubes allow incorporation of ordered structures such as quantum wells and quantum dots, thereby providing the potential for ultralow threshold micro and nano-scale lasers for use in applications such as ultrahigh-speed photonic systems as well as quantum information processing. The intellectual property provides processes of manufacturing these with high reproducibility, low processing complexity, and at high densities. Also provided is a means of releasing the micro- and nanotubes with low stress and a method of “pick-and-place” allowing micro- and nanotubes to be exploited in devices integrated on substrates that are either incompatible with the manufacturing technique or where the area of substrate required to manufacture them is not cost effective or performance of the circuit is compromised. The Need: Freestanding micro-tubes on Si can potentially overcome problems associated with the generation and propagation of dislocations in conventional III-V devices on Si due to the large difference in their lattice and thermal-expansion coefficients and surface incompatibility. Commonly used transfer techniques such as dry-printing and solution-casting can damage freestanding microtubes, which generally exhibit a large (10 um) diameter but very thin (~100 nm) wall. To date, such microtube ring resonators on Si have not been demonstrated. The present technology provides a simple and controllable substrate-onsubstrate transfer process, enabling the achievement of freestanding InGaAs/GaAs quantum dot microtube ring resonators on Si with properties identical to those on GaAs.