CNT-Based Devices

About

Technology: William Judson Ready and Graham Sandborn of the Georgia Tech Research Institute- ELSYS and SSC Pacific, respectively, have developed a thin-film triode design for CNT-based field emission. This innovative triode design uses a dielectric layer to separate a conductive substrate from a counter-electrode (or gate electrode). Isotropic wet etching of an array of micron-scale pits in the dielectric layer enables bundles of CNTs to be synthesized in each pit through chemical vapor deposition. This approach creates a buffer zone around the CNTs, ensuring they are close to—but do not contact—the gate, which would cause a short. This design achieved a current density of 293 uA/cm2 at 200 V in a lightweight package, enabling the development of portable electron source devices. Potential Commercial Applications: Spacecraft electric propulsion Field emission (flat panel) displays X-ray sources Telecommunications equipment Lighting Vacuum electronics devices Benefits/Advantages: Requires very low operating voltage Yields a compact field emitter package Avoids electrical shorts caused by emitter-gate contact Offers better fabrication, eliminating construction and emitter growth defects