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The invention is the design for a radiation hardened transistor through the incorporation of a quantum structure getter (QSG).
About
The invention is the design for a radiation hardened transistor through the incorporation of a quantum structure getter (QSG). The novel quantum structure getter significantly reduces charge reaching the active region of the field effect transistor (FET), minimizing effects such as gate voltage shifting. Single event interrupts and dose rate burnouts possess the potential to cause disruptions and failures in the operation of microelectronic devices in space and other strategic environments.
Key Benefits
* 99% reduction in excess charge generated from radiation * Compatible with many different material systems * Reduction in weight and volume in comparison with heavy metal shielding of contemporary electronics
Applications
* All modern power control systems are migrating towards GaN-based power transistors due to the material’s capability to handle high voltage, current, frequency, and temperature. * This requires heavy shielding because of their vulnerability due to exposure to high energy radiation Space applications, where the size of the shielding necessary is of major importance and reduced size is a benefit (i.e. satellite power supply, power management systems) * Any electronics which are exposed to elevated levels of radiation within nuclear power facilities would benefit Military electronics which might be exposed to elevated levels of radiation