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In this invention, the first electrically injected GeSn laser diode demonstrated using the p-i-n DHS structure. The laser operates from 10 to 100 K under the pulse condition.
About
In this invention, the first electrically injected GeSn laser diode demonstrated using the p-i-n DHS structure. The laser operates from 10 to 100 K under the pulse condition (1kHz repetition rate and 700 ns pulse width). The device has a threshold of 598 A/cm^2 at 10 K and the emission peak wavelength of 2266 nm.
Key Benefits
The invention enables the laser to be: • low-cost • compact • reliable
Applications
Applications: • Infrared laser diode • Light source for integrated photonics on Si (Silicon) Substrate