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Georgia Tech researchers have developed improved semiconductor and transistor devices that include both transistors and semiconductor devices.
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Background: There has been growing markets for high-frequency applications such as mm-wave radars; multi-Gb/s WLANs; 100 Gb/s Ethernet; and THz-imaging systems. The operation frequency of these applications ranges from 10 GHz to 1 THz, and high-speed bipolar transistors (such as InP DHBTs), especially using low-cost silicon-based IC platforms such as SiGe HBTs, are essential in realizing these applications. There exists, however, a fundamental tradeoff between the device cutoff frequency and breakdown voltage. Current approaches to address these issues have undesirable consequences such as compromising both the RF output power and the signal-to-noise ratio of such systems. Georgia Tech researchers have developed improved semiconductor and transistor devices that include both transistors and semiconductor devices incorporating novel superjunction collector designs. A superjunction collector can be utilized to significantly improve avalanche breakdown behavior of SiGe high-speed bi-polar transistors with little or no impact on device speed.